![]() If both inputs are high, both of the nMOS transistors will be ON and both of the pMOS transistors will be OFF. But at least one of the pMOS transistors will be ON, creating a path from Y to VDD. ![]() If either input A or B is logic 0, at least one of the NMOS transistors will be OFF, breaking the path from Y to Ground. It consists of two series NMOS transistors between Y and Ground and two parallel PMOS transistors between Y and VDD. The below figure shows a 2-input Complementary MOS NAND gate. So the output becomes Vdd or the circuit is pulled up to Vdd. When a low-level voltage (a high voltage is applied to the gate, the PMOS will not conduct. P- channel MOSFET consists of P-type Source and Drain diffused on an N-type substrate. NMOS is considered to be faster than PMOS, since the carriers in NMOS, which are electrons, travel twice as fast as the holes. Similarly, when a low voltage is applied to the gate, NMOS will not conduct. When a high voltage is applied to the gate, the NMOS will conduct. In NMOS, the majority of carriers are electrons. ![]() NMOS is built on a p-type substrate with n-type source and drain diffused on it. CMOS (Complementary Metal Oxide Semiconductor) NMOS Please refer to the link to know more about the fabrication process of CMOS transistor. Complementary Metal Oxide Semiconductor transistor consists of P-channel MOS (PMOS) and N-channel MOS (NMOS). This allows integrating more CMOS gates on an IC than in NMOS or bipolar technology, resulting in much better performance. Power is only dissipated in case the circuit actually switches. Unlike NMOS or BIPOLAR circuits, a Complementary MOS circuit has almost no static power dissipation. The main advantage of CMOS over NMOS and BIPOLAR technology is the much smaller power dissipation. CMOS (Complementary Metal Oxide Semiconductor)
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